? 2013 ixys corporation, all rights reserved IXYB82N120C3H1 v ces = 1200v i c110 = 82a v ce(sat) 3.2v t fi(typ) = 93ns ds100355e(6/13) high-speed igbt for 20-50 khz switching features z optimized for low switching losses z square rbsoa z anti-parallel ultra fast diode z positive thermal coefficient of vce(sat) z avalanche rated z high current handling capability z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 3 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 82a, v ge = 15v, note 1 2.75 3.20 v t j = 125 c 3.50 v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 164 a i lrms lead current limit 160 a i c110 t c = 110c 82 a i f110 t c = 110c 42 a i cm t c = 25c, 1ms 320 a i a t c = 25c 41 a e as t c = 25c 800 mj ssoa v ge = 15v, t vj = 125c, r g = 2 i cm = 164 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force 30..120 / 6.7..27 n/lb. weight 10 g 1200v xpt tm igbt genx3 tm w/ diode g = gate c = collector e = emitter tab = collector e plus264 tm g c tab
ixys reserves the right to change limits, test conditions, and dimensions. IXYB82N120C3H1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 30 50 s c ie s 4060 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 285 pf c res 110 pf q g(on) 215 nc q ge i c = 82a, v ge = 15v, v ce = 0.5 ? v ces 26 nc q gc 84 nc t d(on) 29 ns t ri 78 ns e on 4.95 mj t d(off) 192 280 ns t fi 93 ns e of f 2.78 5.00 mj t d(on) 29 ns t ri 90 ns e on 7.45 mj t d(off) 200 ns t fi 95 ns e off 3.70 mj r thjc 0.12 c/w r thcs 0.13 c/w inductive load, t j = 25c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 inductive load, t j = 125c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 1 2.7 v t j = 125c 1.9 v i rm 41 a t rr 420 ns r thjc 0.35 c/w i f = 60a, v ge = 0v, t j = 125c -di f /dt = 700a/ s, v r = 600v plus264 tm (ixyb) outline pin 1 = gate pin 2,4 = collector pin 3 = emitter
? 2013 ixys corporation, all rights reserved IXYB82N120C3H1 fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 160 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 7v 8v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 8v 11v 5v 9v 7v 6v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 120 140 160 0123456 v ce - volts i c - amperes 8v 7v 6v 5v v ge = 15v 13v 11v 10v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 82a i c = 41a i c = 164a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 164 a t j = 25oc 82 a 41 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYB82N120C3H1 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 160 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v ge - volts v ce = 600v i c = 82a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYB82N120C3H1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 2 4 6 8 1012141618 r g - ohms e off - millijoules 0 2 4 6 8 10 12 14 16 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 15. inductive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 180 200 2 4 6 8 10 12 14 16 18 r g - ohms t f i - nanoseconds 140 220 300 380 460 540 620 700 780 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 50 60 70 80 90 100 i c - amperes e off - millijoules 1 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 16. inductive turn-off switching times vs. collector current 0 40 80 120 160 200 240 280 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 170 180 190 200 210 220 230 240 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 40 80 120 160 200 240 25 50 75 100 125 t j - degrees centigrade t f i - nanoseconds 160 180 200 220 240 260 280 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a
ixys reserves the right to change limits, test conditions, and dimensions. IXYB82N120C3H1 ixys ref: ixy_82n120c3(8m)12-13-12-a fig. 19. inductive turn-on switching times vs. collector current 20 40 60 80 100 120 140 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 0 10 20 30 40 50 60 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 25oc t j = 125oc fig. 20. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 t j - degrees centigrade t r i - nanoseconds 22 24 26 28 30 32 34 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 2 4 6 8 10 12 14 16 18 r g - ohms t r i - nanoseconds 20 25 30 35 40 45 50 55 60 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
? 2013 ixys corporation, all rights reserved IXYB82N120C3H1 fig. 26. maximum transient thermal impedance 0.01 0.1 1 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 21. typ. forward characteristics 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 v f - volts i f - [a] t vj = 125oc t vj = 25oc fig. 22. typ. reverse recovery charge q rr vs. -di f /dt 4 5 6 7 8 9 10 11 12 600 700 800 900 1000 1100 1200 1300 -di f /dt - [a/s] q rr - [c] t vj = 125oc v r = 600v 30a 60a 120a fig. 23. typ. peakreverse current i rm vs. -di f /dt 20 30 40 50 60 70 80 90 600 700 800 900 1000 1100 1200 1300 -di f /dt - [a/s] i rm - [a] t vj = 125oc v r = 600v 30a 60a 120a fig. 24. typ. recovery time t rr vs. -di f /dt 200 300 400 500 600 700 600 700 800 900 1000 1100 1200 1300 -di f /dt - [a/s] q rr - [c] t vj = 125oc v r = 600v 30a 60a 120a fig. 25. typ. recovery energy e rec vs. -di f /dt 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 600 700 800 900 1000 1100 1200 1300 -di f /dt - [a/s] e rec - [mj] t vj = 125oc v r = 600v 30a 60a 120a
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